Chemical and electronic structures of Lu2O3/Si interfacial transition layer

被引：38

作者：

Nohira, H

Shiraishi, T

Nakamura, T

Takahashi, K

Takeda, M

Ohmi, S

Iwai, H

Hattori, T

机构：

[1] Musashi Inst Technol Engn, Dept Elect & Elect Engn, Tokyo 1588557, Japan

[2] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED SURFACE SCIENCE | 2003年 / 216卷 / 1-4期

关键词：

high-K; Lu2O3; transition layer; silicate; depth profiling; XPS;

D O I：

10.1016/S0169-4332(03)00425-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The composition of transition layer (TL) formed between Lu2O3 and Si(1 0 0) substrate was determined non-destructively by applying newly developed depth profiling method to the angle-resolved Si 2p and Lu 4d photoelectron spectra. The conduction and valence band alignments of Lu2O3 with respect to Si(1 0 0) were also determined from the measurement of 0 Is photoelectron spectra and valence band spectra. (C) 2003 Elsevier Science B.V. All rights reserved.

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页码：234 / 238

页数：5

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