Printed WORM Memory on a Flexible Substrate Based on Rapid Electrical Sintering of Nanoparticles

被引：23

作者：

Leppaniemi, Jaakko ^{[1
]}

Aronniemi, Mikko ^{[1
]}

Mattila, Tomi ^{[1
]}

Alastalo, Ari ^{[1
]}

Allen, Mark ^{[1
,2
]}

Seppa, Heikki ^{[1
]}

机构：

[1] VTT Tech Res Ctr Finland, Espoo 02044, Finland

[2] Aalto Univ, Dept Radio Sci & Engn, Espoo 02150, Finland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 01期

关键词：

Electrical sintering; low-voltage programmable memory; nanoparticles; printed memory; write-once memory; DEVICES;

D O I：

10.1109/TED.2010.2088402

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully printed low-voltage programmable resistive write-once-read-many (WORM) memory on a flexible substrate is investigated. The memory concept is demonstrated using inkjet-printed silver nanoparticle structures on a photopaper. The initial high-resistance state "0" is written into the low-resistance state "1" using rapid electrical sintering. A key advantage is low writing power and energy. The long-term stability of the initial nonsintered state is found to require special attention to obtain a sufficient shelf storage time. The memory design offers potential for high-throughput roll-to-roll production.

引用

页码：151 / 159

页数：9

共 28 条

[1] Modelling of nanoparticle sintering under electrical boundary conditions [J].