Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices

被引：171

作者：

Cho, Byungjin ^{[1
]}

Kim, Tae-Wook ^{[1
]}

Song, Sunghoon ^{[1
]}

Ji, Yongsung ^{[1
]}

Jo, Minseok ^{[1
]}

Hwang, Hyunsang ^{[1
,2
]}

Jung, Gun-Young ^{[1
]}

Lee, Takhee ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 11期

关键词：

THIN-FILM; POLYMER; BISTABILITY; TRANSISTORS; EFFICIENT;

D O I：

10.1002/adma.200903203

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

One diode one resistor (1D-1R) hybridtype devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D-1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without restrictions due to cross-talk between cells.

引用

页码：1228 / +

页数：6

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