Stackable All-Oxide-Based Nonvolatile Memory With Al2O3 Antifuse and p-CuOx/n-InZnOx Diode

被引：33

作者：

Ahn, Seung-Eon ^{[1
]}

Kang, Bo Soo ^{[1
]}

Kim, Ki Hwan ^{[1
]}

Lee, Myoung-Jae ^{[1
]}

Lee, Chang Bum ^{[1
]}

Stefanovich, Genrikh ^{[1
]}

Kim, Chang Jung ^{[1
]}

Park, Youngsoo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Lab, Yongin 449711, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 05期

关键词：

Antifuse; one-time field-programmable (OTP) memory; oxide diode;

D O I：

10.1109/LED.2009.2016582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed all-oxide-based nonvolatile memory for low-cost, high-density, and high-performance one-time field-programmable (OTP) memories compared with Si-based antifuse memory using antifuse technologies over a glass substrate. The oxide OTP memory employed the p-n CuO/InZnOx diode as the switching element of the memory cell and Al2O3 for the antifuse as the storage node of the memory cell. The memory cell is programmed from the breakdown of Al2O3 by applying a program voltage bias that is about 4.5 V. The OTP memory cells show large on/off ratio of about 10(6) and small current distributions at programmed and unprogrammed states resulting from the perfect uniformity of Al2O3 thin film before and after breakdown. It also showed a fast programming speed of about 20 ns.

引用

页码：550 / 552

页数：3

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