Vertical p-i-n polysililcon diode with antifuse for stackable field-programmable ROM

被引：30

作者：

Herner, SB ^{[1
]}

Bandyopadhyay, A ^{[1
]}

Dunton, SV ^{[1
]}

Eckert, V ^{[1
]}

Gu, J ^{[1
]}

Hsia, KJ ^{[1
]}

Hu, S ^{[1
]}

Jahn, C ^{[1
]}

Kidwell, D ^{[1
]}

Konevecki, M ^{[1
]}

Mahajani, M ^{[1
]}

Park, K ^{[1
]}

Petti, C ^{[1
]}

Radigan, SR ^{[1
]}

Raghuram, U ^{[1
]}

Vienna, J ^{[1
]}

Vyvoda, MA ^{[1
]}

机构：

[1] Matrix Semicond, Santa Clara, CA 95054 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 05期

关键词：

antifuse; breakdown; p-i-n diode; polysilicon; read-only memories (ROMs);

D O I：

10.1109/LED.2004.827287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A field-programmable, stackable memory cell using 0.15-mum technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO2 antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.

引用

页码：271 / 273

页数：3

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