High-current-density CuOx/ZnOx thin-film diodes for cross-point memory applications

被引：106

作者：

Kang, Bo Soo ^{[1
]}

Ahn, Seung-Eon ^{[1
]}

Lee, Myoung-Jae ^{[1
]}

Stefanovich, Genrikh ^{[1
]}

Kim, Ki Hwan ^{[1
]}

Xianyu, Wen Xu ^{[1
]}

Lee, Chang Bum ^{[1
]}

Park, Youngsoo ^{[1
]}

Baek, In Gyu ^{[2
]}

Park, Bae Ho ^{[3
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South Korea

[2] Samsung Elect Co Ltd, Proc Dev Team, Yongin 449711, South Korea

[3] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 16期

关键词：

D O I：

10.1002/adma.200702932

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Room-temperature-deposited CuOx/InZnOx thin-film heteroJunction diodes show a high current density of 3.5 X 10(4) A cm(-2) and a high on/off current ratio of 10(6) (see figure). The oxide diode is a promising switch element for three-dimensional stackable memory devices, where high-temperature-prepared silicon diodes are difficult to apply.

引用

页码：3066 / 3069

页数：4

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