CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS-SILICON P-N-JUNCTIONS

被引：25

作者：

HARRIS, AJ

WALKER, RS

SNEDDON, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 08期

关键词：

D O I：

10.1063/1.328246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4287 / 4290

页数：4

共 15 条

[1] CONTRAST OPTIMIZATION IN MATRIX-ADDRESSED LIQUID-CRYSTAL DISPLAYS [J].

BIGELOW, JE ;

KASHNOW, RA ;

STEIN, CR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (01) :22-24

[2] SOLAR-CELLS USING DISCHARGE-PRODUCED AMORPHOUS SILICON [J].

CARLSON, DE ;

WRONSKI, CR .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) :95-106

[3] AMORPHOUS SILICON SOLAR-CELLS [J].

CARLSON, DE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :449-453

[4]

CASTLEBERRY DE, 1979, IEEE T ELECTRON DEV, V26, P1123, DOI 10.1109/T-ED.1979.19561

[5] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].

CHYNOWETH, A ;

LOGAN, RA ;

FELDMANN, WL .

PHYSICAL REVIEW, 1961, 121 (03) :684-&

[6] PHOTOLUMINESCENCE IN AMORPHOUS SILICON [J].

ENGEMANN, D ;

FISCHER, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (01) :195-202

[7] MONOLITHIC SOLAR-CELL PANEL OF AMORPHOUS SILICON [J].

HANAK, JJ .

SOLAR ENERGY, 1979, 23 (02) :145-147

[8] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J].

JONES, DI ;

COMBER, PGL ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :541-551

[9] DEFECTS IN PLASMA-DEPOSITED A-SI-H [J].

KNIGHTS, JC ;

LUCOVSKY, G ;

NEMANICH, RJ .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :393-403

[10]

Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

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