Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

被引：44

作者：

Lee, M. J. ^{[1
]}

Park, Y. ^{[1
]}

Ahn, S. E. ^{[1
]}

Kang, B. S. ^{[1
]}

Lee, C. B. ^{[1
]}

Kim, K. H. ^{[1
]}

Xianyu, W. X. ^{[1
]}

Yoo, I. K. ^{[1
]}

Lee, J. H. ^{[2
]}

Chung, S. J. ^{[2
]}

Kim, Y. H. ^{[2
]}

Lee, C. S. ^{[2
]}

Choi, K. N. ^{[3
]}

Chung, K. S. ^{[3
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device Lab, Gyeongido 446715, South Korea

[2] Samsung Adv Inst Technol, Nano Frabicat Technol Ctr, Gyeongido 446715, South Korea

[3] Kyung Hee Univ, Dept Elect Engn, Gyeongido 449701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 01期

关键词：

D O I：

10.1063/1.2829814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to investigate the mechanism behind bistable resistance switching in NiO thin films, we have done detailed x-ray photon spectroscopy (XPS) and x-ray diffraction Analysis (XRD) on NiO and Ti doped NiO samples fabricated under various conditions. We discovered that a high initial resistivity was required for samples to undergo bistable resistance switching, and the presence of metallic Ni content in these samples was determined by XPS. XRD data also showed that NiO grown with a relative (200) orientation was preferred over those grown with relative (111) orientation. (c) 2008 American Institute of Physics.

引用

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