Origin of visible light absorption in GaN-Rich (Ga1-xZnx)(N1-xOx) photocatalysts

被引：82

作者：

Hirai, Takeshi ^{[1
]}

Maeda, Kazuhiko ^{[2
]}

Yoshida, Masaaki ^{[2
]}

Kubota, Jun ^{[2
]}

Ikeda, Shigeru ^{[1
]}

Matsumura, Michio ^{[1
]}

Domen, Kazunari ^{[2
]}

机构：

[1] Osaka Univ, Res Ctr Solar Energy Chem, Toyonaka, Osaka 5608531, Japan

[2] Univ Tokyo, Dept Chem Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2007年 / 111卷 / 51期

关键词：

D O I：

10.1021/jp709811k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 [物理化学]; 081704 [应用化学];

摘要：

Photoluminescence (PL) and photoluminescence excitation (PLE) spectra of (Ga1-xZnx)(N1-xOx) with compositions of x = 0.05-0.20 (i.e., GaN-rich) were measured at 10 K in an attempt to clarify the origin of the visible light activity of this material as a photocatalyst. It was found that the PL spectra of GaN-rich (Ga1-xZnx)(N1-xOx) can be interpreted to correspond to impurity levels, specifically acceptor levels formed by the substitution of Zn for Ga in GaN. The PL and PLE spectra suggest that the visible light absorption of this material occurs via the Zn-related acceptor levels.

引用

页码：18853 / 18855

页数：3

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