Composition and temperature dependence of the direct band gap of GaAs1-xNx(0≤x≤0.0232) using contactless electroreflectance

被引：53

作者：

Malikova, L ^{[1
]}

Pollak, FH

Bhat, R

机构：

[1] CUNY Brooklyn Coll, Dept Phys, Brooklyn, NY 11210 USA

[2] CUNY Brooklyn Coll, New York State Ctr Adv Technol Ultrafast Photon M, Brooklyn, NY 11210 USA

[3] CUNY Grad Sch & Univ Ctr, New York, NY 10036 USA

[4] BELLCORE, Navesink Res Ctr, Red Bank, NJ 07701 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 05期

基金：

美国国家科学基金会;

关键词：

band gap; electroreflectance; GaAsN; temperature dependence;

D O I：

10.1007/s11664-998-0181-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The composition and temperature dependence (20K<T < 380K) of the direct gap, E-0, of a series of GaAs1-xNx/GaAs (0 less than or equal to x less than or equal to 0.0232) samples has been measured using contactless electroreflectance. Our results for the composition dependence off, are different in relation to a recent experiment [W.G. Bi and C.W Tu, Appl. Phys. Lett. 70, 1608 (1997)]. In contrast to previously reported results, we find that the temperature dependence of the direct gap is in fact dependent on N composition and that the parameters which describe the temperature dependence of the band gap lie between those of GaAs and GaN.

引用

页码：484 / 487

页数：4

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