Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

被引：74

作者：

Nayfeh, A ^{[1
]}

Chui, CO

Yonehara, T

Saraswat, KC

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Canon Inc, Leading Edge Technol Dev Headquarters, Kanagawa 2430193, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 05期

关键词：

anneal; dislocations; effective field; effective mobility; germanium; germanium oxynitride (GOI); heteroepitaxy; hydrogen; mobility; MOS devices;

D O I：

10.1109/LED.2005.846578

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge-Si interface, thus not threading to the surface as expected in this 4.2% lattice-mismatched system. We used a low thermal budget process with silicon dioxide on germanium oxynitride (GeOxNy) gate dielectric and Si(0.75)Geo(0.25) gate electrode. Characterization of the device using cross-sectional transmission electron microscopy and atomic force microscopy at different stages of the fabrication illustrates device-quality interfaces that yielded hole effective mobility as high as 250 cm(2)/Vs.

引用

页码：311 / 313

页数：3