Structure model for the type-C defect on the Si(001) surface

被引：29

作者：

Uda, T ^{[1
]}

Terakura, K ^{[1
]}

机构：

[1] NATL INST ADV INTERDISCIPLINARY RES,JRCAT,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.53.6999

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A structure model for the type-C defect on Si(001) is proposed. The model is based on the assumption that the type-C defect is originated from a removal of only one atom in the second layer and not a removal of two atoms on the surface. Optimized structure obtained from the first-principles calculation reproduces scanning tunnel microscope images both at negative and positive sample biases.

引用

页码：6999 / 7001

页数：3

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