GROUND-STATE PROPERTIES OF GAAS AND ALAS

被引：73

作者：

IHM, J

JOANNOPOULOS, JD

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.24.4191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4191 / 4197

页数：7

共 30 条

[1]

BAUER RS, 1981, 8TH P ANN C PHYS COM

[2]

BORN M, 1954, DYNAMICAL THEORY CRY, P43

[3] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[4] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, LL ;

SEGMULLER, A ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1976, 28 (01) :39-41

[5] ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM [J].

CHELIKOWSKY, JR ;

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1981, 23 (08) :4013-4022

[6] THOMAS-FERMI-PSEUDOPOTENTIAL APPROACH FOR CALCULATING THE STATIC PROPERTIES OF SIMPLE METALS [J].

CHELIKOWSKY, JR .

PHYSICAL REVIEW B, 1980, 21 (08) :3074-3086

[7] ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL [J].

DUKE, CB ;

PATON, A ;

MEYER, RJ ;

BRILLSON, LJ ;

KAHN, A ;

KANANI, D ;

CARELLI, J ;

YEH, JL ;

MARGARITONDO, G ;

KATNANI, AD .

PHYSICAL REVIEW LETTERS, 1981, 46 (06) :440-443

[8] LOW-TEMPERATURE ELASTIC CONSTANTS OF GALLIUM ARSENIDE [J].

GARLAND, CW ;

PARK, KC .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) :759-&

[9] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J].

GOSSARD, AC ;

PETROFF, PM ;

WEIGMANN, W ;

DINGLE, R ;

SAVAGE, A .

APPLIED PHYSICS LETTERS, 1976, 29 (06) :323-325

[10] CONTRIBUTION TO COHESIVE ENERGY OF SIMPLE METALS - SPIN-DEPENDENT EFFECT [J].

GUNNARSSON, O ;

LUNDQVIST, BI ;

WILKINS, JW .

PHYSICAL REVIEW B, 1974, 10 (04) :1319-1327

← 1 2 3 →