A theoretical study of a sulfur impurity in diamond

被引：58

作者：

Miyazaki, T

Okushi, H

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Waseda Univ, Japan Sci & Technol Corp, CREST, Tokyo, Japan

来源：

关键词：

n-type doping; nitrogen; impurities; defect;

D O I：

10.1016/S0925-9635(00)00582-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An isolated substitutional sulfur in diamond is found to be a deep donor. Some complex sulfur defects with nitrogen, boron and a vacancy may have donor levels in the range of 0.4-0.5 eV. However, formation energies of the defects of our interest are all high. Thus, we expect that, although sulfur can be a relatively shallow donor in diamond, its doping efficiency is quite low. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：449 / 452

页数：4

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