Radiation response of dual-junction GayIn1-yP/Ga1-xInxAs solar cells

被引：4

作者：

Dimroth, F ^{[1
]}

Bett, AW ^{[1
]}

Walters, RJ ^{[1
]}

Summers, GP ^{[1
]}

Messenger, SR ^{[1
]}

Takamoto, T ^{[1
]}

Ikeda, E ^{[1
]}

Imaizumi, M ^{[1
]}

Anzawa, O ^{[1
]}

Matsuda, S ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst, D-79100 Freiburg, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916081

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The radiation response of dual-junction GayIn1-yP/Ga1-xInxAs solar cells grown with 0.35 <y < 0.51 and 0.01 < x < 0.17 is presented. These lattice-mismatched structures were grown by metal-organic-vapor-phase-epitaxy on GaAs or Ge substrates. Measurement of the photovoltaic output of the cells made under simulated one-sun, AM0 spectral conditions shows that the new dual-junction GaxIn1-xP/GayIn1-yAs cells perform as well or better than commercially available multijunction cells. Measurement of the quantum efficiency gives insight into which subcell determines the total cell degradation under proton irradiation. As has been found previously for the GayIn1-yP/GaAs tandem cell, degradation of the new GayIn1-yP/Ga1-xInxAs material combination is controlled by the bottom solar cell. Analysis of the irradiation data is used to determine the basic mechanisms governing the radiation response of these devices, including the effect of stoichiometry, lattice-mismatch and cell structure.

引用

页码：1110 / 1113

页数：4

共 12 条

[1] MOVPE grown Ga1-xInxAs solar cells for GaInP/GaInAs tandem applications [J].