DISPLACEMENT DAMAGE ANALOGS TO IONIZING-RADIATION EFFECTS

We show that concepts, such as effective equivalent dose and the quality factor, which have long been found useful in comparing the effects of different kinds of ionizing radiation, are also applicable in correlating displacement damage effects in semiconductors. In the case of displacement damage, the energy deposition process is determined by the nonionizing energy loss (NIEL), instead of linear energy transfer (LET), as in ionization.