A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction

被引：13

作者：

Ikegawa, S

Asao, Y

Saito, Y

Takahashi, S

Kai, T

Tsuchida, K

Yoda, H

机构：

[1] MRAM Spintron R&D Ctr, R&D Assoc Furure Electron Devices, Sagamihara, Kanagawa 2291198, Japan

[2] Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

[3] Toshiba Co Ltd, SoC Res & Dev Ctr, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 7A期

关键词：

MRAM; memory; CMOS; magnetic tunnel junction; tunnel magnetoresistance; double junction;

D O I：

10.1143/JJAP.42.L745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 1 kb magnetoresistive random access memory (MRAM) is demonstrated with a 0.4 x 1.2 mum(2) magnetic tunnel junction (MTJ) and 0.18 mum complementary metal-oxide-semiconductor (CMOS) technology. In this study, a double MTJ, which is designed to have a larger signal margin than a conventional MTJ, is used. The uniformity of resistance for a double MTJ is comparable to that of a single MTJ and is expected to be better than a single MTJ if process conditions are optimized. The magnetic design of the MTJ provided a good astroid curve and resulted in 90% of bits working towards a relatively broad range of bit-line voltage and word-line voltage.

引用

页码：L745 / L747

页数：3

共 13 条

[1]

[Anonymous], IEEE INT SOL STAT CI

[2]

ASAO Y, 2002, KOR JAP S SPINTR ITS, P165

[3]

Durlan M., 2000, ISSCC, P130

[4] Double tunnel junctions for magnetic random access memory devices [J].