On the design of piezoresistive silicon cantilevers with stress concentration regions for scanning probe microscopy applications

被引:54
作者
Bashir, R [1 ]
Gupta, A
Neudeck, GW
McElfresh, M
Gomez, R
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Dept Biomed Engn, W Lafayette, IN 47907 USA
[3] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
关键词
D O I
10.1088/0960-1317/10/4/301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the design of silicon based cantilevers for scanning probe microscopy has been described in detail. ANSYS software has been used as a tool to design and model the mechanical properties of the silicon based cantilevers. The incorporation of stress concentration regions (SCRs) with a thickness smaller than the cantilever thickness, to localize stresses, has been explored in detail to enhance the piezoresistive displacement, force, and torque sensitivity. In addition, SCRs of widths less than the cantilever width have also been explored. Two basic designs were studied, i.e. a rectangular cantilever and a U-shaped cantilever. The placement of the SCR was found to be critical, and optimal placement and thickness of the SCR can result in a 2x and 5x improvement in piezoresistive displacement and force sensitivity, respectively, for the rectangular cantilever. For the U-shaped cantilever, the torsional piezoresistive sensitivity was found to increase by 5x, depending on the SCR thickness. Process flows and associated fabrication challenges for the proposed cantilever structures are also presented.
引用
收藏
页码:483 / 491
页数:9
相关论文
共 22 条
  • [1] AUBERTONHERVE A, 1996, P INT EL DEV M, P3
  • [2] Precision electrical trimming of very low TCR poly-SiGe resistors
    Babcock, JA
    Francis, P
    Bashir, R
    Kabir, AE
    Schroder, DK
    Lee, MSL
    Dhayagude, T
    Yindeepol, W
    Prasad, SJ
    Kalnitsky, A
    Thomas, ME
    Haggag, H
    Egan, K
    Bergemont, A
    Jansen, P
    [J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) : 283 - 285
  • [3] Formation of self-assembled Si1-xGex islands using reduced pressure chemical vapor deposition and subsequent thermal annealing of thin germanium-rich films
    Bashir, R
    Kabir, AE
    Chao, KJ
    [J]. APPLIED SURFACE SCIENCE, 1999, 152 (1-2) : 99 - 106
  • [4] CHARACTERIZATION OF SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH OF SILICON
    BASHIR, R
    NEUDECK, GW
    HAW, Y
    KVAM, EP
    DENTON, JP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 923 - 927
  • [5] ATOMIC FORCE MICROSCOPE
    BINNIG, G
    QUATE, CF
    GERBER, C
    [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (09) : 930 - 933
  • [6] SILICON CANTILEVERS AND TIPS FOR SCANNING FORCE MICROSCOPY
    BRUGGER, J
    BUSER, RA
    DEROOIJ, NF
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1992, 34 (03) : 193 - 200
  • [7] Microfabricated ultrasensitive piezoresistive cantilevers for torque magnetometry
    Brugger, J
    Despont, M
    Rossel, C
    Rothuizen, H
    Vettiger, P
    Willemin, M
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1999, 73 (03) : 235 - 242
  • [8] Fabrication of multipurpose piezoresistive Wheatstone bridge cantilevers with conductive microtips for electrostatic and scanning capacitance microscopy
    Gotszalk, T
    Radojewski, J
    Grabiec, PB
    Dumania, P
    Shi, F
    Hudek, P
    Rangelow, IW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3948 - 3953
  • [9] High-sensitivity piezoresistive cantilevers under 1000 Å thick
    Harley, JA
    Kenny, TW
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (02) : 289 - 291
  • [10] HASSAN EA, 1998, BIOPHYS J, V74, P1564