X-ray determination of vertical ordering of InAs quantum dots in InAs/GaAs multilayers

被引:9
作者
González, JC
Magalhaes-Paniago, R
Rodrigues, WN
Malachias, A
Moreira, MVB
de Oliveira, AG
Mazzaro, I
Cusatis, C
Metzger, TH
Peisl, J
机构
[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[2] Univ Fed Parana, Ctr Politecn, Dept Fis, BR-81531990 Curitiba, Parana, Brazil
[3] Univ Munich, Sekt Phys, D-80539 Munich, Germany
[4] Univ Munich, Ctr Nano Sci, D-80539 Munich, Germany
关键词
D O I
10.1063/1.1347024
中图分类号
O59 [应用物理学];
学科分类号
摘要
The degree of vertical alignment of InAs quantum dots in InAs/GaAs(001) multilayers was studied using grazing incidence x-ray scattering. We show that it is necessary to access one of the weak (200) x-ray reflections to observe the modulation of the GaAs lattice periodicity produced by the stacking of the InAs dots. The degree of alignment of the dots was assessed by fitting the x-ray diffuse scattering profiles near a GaAs (200) reciprocal lattice point. By using a model of gaussian lateral displacement of the dots, we show that we can determine the average value of the mistake in stacking positions of the islands from one bilayer to the next. (C) 2001 American Institute of Physics.
引用
收藏
页码:1056 / 1058
页数:3
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