Responsivity enhancement of InGaAs based MSM photodetectors using 2DEG layer sequence and semitransparent electrodes

被引:5
作者
Horstmann, M
Marso, M
Muttersbach, J
Schimpf, K
Kordos, P
机构
[1] Inst. of Thin Film and Ion Technol., Research Centre Jülich
关键词
metal-semiconductor-metal structures; photodetectors;
D O I
10.1049/el:19961083
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The optoelectronic behaviour of InGaAs based metal-semiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 mu m(2) area and interdigitated electrodes with 2 mu m finger-spacing and finger-width exhibit a dark current density less than 10pA/mu m(2), a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61 A/W and a-3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth.
引用
收藏
页码:1613 / 1615
页数:3
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