Very low dark current InGaP/GaAs MSM-photodetector using semi-transparent and opaque contacts

被引：9

作者：

Matin, MA ^{[1
]}

Song, KC ^{[1
]}

Robinson, BJ ^{[1
]}

Simmons, JG ^{[1
]}

Thompson, DA ^{[1
]}

Gouin, F ^{[1
]}

机构：

[1] COMMUN RES CTR,OTTAWA,ON K2H 8S2,CANADA

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 08期

关键词：

metal-semiconductor-metal structures; photodetectors;

D O I：

10.1049/el:19960473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-semiconductor-metal (MSM) photodetectors have been fabricated for the first time in the InGaP/GaAs materials system. Extremely low dark currents 86 (+/-5)pA and 91 (+/-5)pA were obtained at 5V bias using opaque and semi-transparent metal (tungsten) contacts, respectively. A front illumination responsivity of 0.37A/W - 0.65A/W at 5V bias is obtained for a 50 mu m x 50 mu m device with 2 mu m finger width and 2 mu m finger spacing. The devices, operating at 840nm, have a 3dB bandwidth of >9.5GHz for semi-transparent contacts, and 12GHz with opaque contacts.

引用

页码：766 / 767

页数：2

共 6 条

[1] HIGH-SPEED MONOLITHICALLY INTEGRATED GAAS PHOTORECEIVER USING A METAL-SEMICONDUCTOR-METAL PHOTODIODE [J].