Progress in sputtered tungsten trioxide for photoelectrode applications

被引：132

作者：

Marsen, Bjorn ^{[1
]}

Miller, Eric L. ^{[1
]}

Paluselli, Daniela ^{[1
]}

Rocheleau, Richard E. ^{[1
]}

机构：

[1] Univ Hawaii Manoa, Hawaii Nat Energy Inst, Honolulu, HI 96822 USA

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2007年 / 32卷 / 15期

关键词：

WO3; photoelectrode; photoelectrochemical cell; hydrogen;

D O I：

10.1016/j.ijhydene.2006.01.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In the context of photoelectrochemical water-splitting, tungsten oxide films have been fabricated at low processing temperatures (< 250 degrees C) by reactive sputtering from tungsten targets in an argon/oxygen ambient. The films have a dense, compact morphology and show columnar growth. Amorphous and highly polycrystalline films can be produced depending on the deposition conditions; polycrystalline phases appear only at higher temperatures and under certain sputter target conditions. Large crystallites proved beneficial to photoelectrochemical performance. A maximum photocurrent of 2.7 mA/cm(2) (at 1.6V vs SCE) was observed in 0.33 M H3PO4 under AM 1.5 Global illumination, exceeding published results for material fabricated at higher temperatures (in the 400-600 degrees C range). Doping of sputtered tungsten oxide films with nitrogen results in a red-shifted absorption edge, but so far not, in increased photocurrents. The maximum photocurrent of a nitrogen-doped sample was measured at 2.3 mA/cm(2) (at 1.6V vs SCE). A multi-junction photoanode based on the best available sputtered WO3 film and an amorphous silicon photovoltaic device is projected to operate at 2.2% solar-to-hydrogen efficiency. (C) 2007 International Association for Hydrogen Energy. Published by Elsevier Ltd. All rights reserved.

引用

页码：3110 / 3115

页数：6

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