Wetting layer carrier dynamics in InAs/InP quantum dots

被引：28

作者：

Hinooda, S

Loualiche, S

Lambert, B

Bertru, N

Paillard, M

Marie, X

Amand, T

机构：

[1] INSA Rennes, Lab Phys Solide, F-35045 Rennes, France

[2] Phys Mat Condensee Lab, UMR 5830, F-31077 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期

关键词：

D O I：

10.1063/1.1338953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic coupling between InAs/InP quantum dot (QD) array and its wetting layer (WL) is studied by continuous wave and time resolved photoluminescence. The carrier dynamics is explained by the existence of two regimes in the WL: at low QD density the carrier dynamics is dominated by the diffusion and at high density when the distance between QDs is comparable to the carrier mean free path in the WL the quantum capture into QDs dominates. From the identification of these two regimes the carrier mean free path in the WL is estimated to about 30 nm. (C) 2001 American Institute of Physics.

引用

收藏

页码：3052 / 3054

页数：3

相关论文

共 19 条

[1] WELL-WIDTH DEPENDENCE OF THE EXCITONIC LIFETIME IN STRAINED III-V QUANTUM-WELLS [J].

AMAND, T ;

MARIE, X ;

DAREYS, B ;

BARRAU, J ;

BROUSSEAU, M ;

DUNSTAN, DJ ;

EMERY, JY ;

GOLDSTEIN, L .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (05) :2077-2079

[2] Self-organized InAs islands on InP(311)B substrates emitting around 1.55 μm [J].

Fréchengues, S ;

Drouot, V ;

Bertru, N ;

Lambert, B ;

Loualiche, S ;

Le Corre, A .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :1180-1185

[3]

Fréchengues S, 1999, APPL PHYS LETT, V74, P3356, DOI 10.1063/1.123343

[4]

Frechengues S, 1997, APPL PHYS LETT, V71, P2818, DOI 10.1063/1.120145

[5] InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si [J].

Gerard, JM ;

Cabrol, O ;

Sermage, B .

APPLIED PHYSICS LETTERS, 1996, 68 (22) :3123-3125

[6] Spontaneous lifetime control in a native-oxide-apertured microcavity [J].

Graham, LA ;

Huffaker, DL ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1999, 74 (17) :2408-2410

[7] Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers [J].

Harris, L ;

Mowbray, DJ ;

Skolnick, MS ;

Hopkinson, M ;

Hill, G .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :969-971

[8] Energy relaxation by multiphonon processes in InAs/GaAs quantum dots [J].

Heitz, R ;

Veit, M ;

Ledentsov, NN ;

Hoffmann, A ;

Bimberg, D ;

Ustinov, VM ;

Kopev, PS ;

Alferov, ZI .

PHYSICAL REVIEW B, 1997, 56 (16) :10435-10445

[9]

HINOODA S, 1999, P 11 INT C IND PHOSP

[10] NEW OPTICAL MEMORY STRUCTURE USING SELF-ASSEMBLED INAS QUANTUM DOTS [J].

IMAMURA, K ;

SUGIYAMA, Y ;

NAKATA, Y ;

MUTO, S ;

YOKOYAMA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (11A) :L1445-L1447