NEW OPTICAL MEMORY STRUCTURE USING SELF-ASSEMBLED INAS QUANTUM DOTS

被引：138

作者：

IMAMURA, K ^{[1
]}

SUGIYAMA, Y ^{[1
]}

NAKATA, Y ^{[1
]}

MUTO, S ^{[1
]}

YOKOYAMA, N ^{[1
]}

机构：

[1] HOKKAIDO UNIV, FAC ENGN, SAPPORO, HOKKAIDO 060, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 11A期

关键词：

INAS; SELF-ASSEMBLED QUANTUM DOTS (QDS); PHOTOCURRENT; WAVELENGTH-DOMAIN-MULTIPLICATION MEMORY; MEMORY RETENTION TIME;

D O I：

10.1143/JJAP.34.L1445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a new optical memory structure using self-assembled InAs quantum dots (QDs) for possible applications to wavelength-domain-multiplication memory, which should lead to increase memory density. Data stored in this memory structure can be read using photocurrent and then erased electrically. In a preliminary study, we confirmed the memory effect of photocurrent caused by the InAs QDs for the first time. A retention time of 0.48 ms for the memory was obtained at 300 K.

引用

页码：L1445 / L1447

页数：3

共 8 条

[1] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].