Erbium in Si-based light confining structures

被引：7

作者：

Lipson, M ^{[1
]}

Chen, T ^{[1
]}

Chen, K ^{[1
]}

Duan, X ^{[1
]}

Kimerling, LC ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 81卷 / 1-3期

关键词：

erbium; microcavity; photoluminescence;

D O I：

10.1016/S0921-5107(00)00685-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Erbium can provide the Silicon with optoelectronic capabilities, Er:Si has a very sharp emission line at 1.54 mum. The main limitation of Erbium is its low emission efficiency at room temperature. In this work, we show that microcavities can modify the optical properties of the Erbium, Two different mechanisms for modifying the optical properties of the Er ions were studied, one in which the collection of light is optimized. In this case, an enhancement of the photoluminescence by a factor of 1000 was obtained. The second mechanism that was studied is a strong photon-Erbium interaction. In this case, we show evidence for mixing of optical properties of Erbium and photons indicating that properties such as lifetime and energy levels call be changed externally. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：36 / 39

页数：4

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