Impact of vicinal sapphire (0001) substrates on the high-quality AIN films by plasma-assisted molecular beam epitaxy

被引：72

作者：

Shen, XQ ^{[1
]}

Shimizu, M ^{[1
]}

Okumura, H ^{[1
]}

机构：

[1] AIST, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 11A期

关键词：

AIN; vicinal sapphire (0001) substrate; surface diffusion; step bunching; rf-MBE;

D O I：

10.1143/JJAP.42.L1293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN films grown by plasma-assisted molecular beam epitaxy on vicinal sapphire (0001) substrates were investigated. High structural and optical qualities were confirmed by high-resolution X-ray diffraction and 77 K cathodoluminescence measurements. It was found that changing the vicinal angles of sapphire substrates can easily control the surface morphologies of AlN films. Spiral-growth features were greatly suppressed. Furthermore, well-ordered straight monatomic-layer steps and multi-atomic-layer macro-steps were clearly observed by atomic force microscopy. Surface diffusion and step incorporation kinetics during the growth are the key-factors in determining the surface morphologies.

引用

页码：L1293 / L1295

页数：3

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