Essential change in crystal qualities of GaN films by controlling lattice polarity in molecular beam epitaxy

被引：57

作者：

Shen, XQ

Ide, T

Cho, SH

Shimizu, M

Hara, S

Okumura, H

Sonoda, S

Shimizu, S

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Ulvac Japan Ltd, Chigasaki, Kanagawa 2538543, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 1AB期

关键词：

CAICISS; lattice polarity; GaN; Ga-polarity; molecular beam epitaxy;

D O I：

10.1143/JJAP.39.L16

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN heteroepitaxial growth on sapphire (0001) substrates was carried our by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). A Ga-polarity growth was achieved by using an AIN high-temperature buffer layer. The epilayer polarity was characterized directly by coaxial impact collision ion scattering spectra (CAICISS). It was found that the properties of the GaN films showing Ga-face polarity, including their structural and electrical properties, were dramatically improved compared to those of films with N-face polarity. This important conclusion is considered to be a breakthrough in the realization of high-quality III-nitride films by MBE for device applications.

引用

收藏

页码：L16 / L18

页数：3

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