Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3

被引：40

作者：

Grandjean, N ^{[1
]}

Massies, J ^{[1
]}

Leroux, M ^{[1
]}

Lorenzini, P ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.120651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si- and Mg-doped GaN layers were grown on c-plane sapphire substrates by molecular beam epitaxy with NH3 as the nitrogen precursor. Their optical and electrical properties were investigated by photoluminescence experiments and Hall measurements, respectively. P-type conductivity, with a net acceptor concentration of 3x10(17) cm(-3) and a mobility of 8 cm(2)/V s, was obtained. Mesa-etched light-emitting diodes were processed from p-n junctions. The turn-on voltage is 3 V and the forward current reaches 20 mA at 3.5 V. The room-temperature electroluminescence exhibits a strong emission at 390 nm. (C) 1998 American Institute of Physics.

引用

页码：82 / 84

页数：3

共 25 条

[1] AKTAS O, 1995, ELECTRON LETT, V31, P1389
[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[3] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
AMANO, H
SAWAKI, N
AKASAKI, I
TOYODA, Y
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
[4] Cheng TS, 1997, MRS INTERNET J N S R, V2
[5] Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
Grandjean, N
Leroux, M
Laugt, M
Massies, J
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (02) : 240 - 242
[6] Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
Grandjean, N
Massies, J
Leroux, M
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (14) : 2071 - 2073
[7] Effect of structural defects and chemical impurities on Hall mobilities in low pressure MOCVD grown GaN
Hwang, CY
Schurman, MJ
Mayo, WE
Lu, YC
Stall, RA
Salagaj, T
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 243 - 251
[8] Kamp M, 1997, MRS INTERNET J N S R, V2
[9] Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics
Kim, W
Aktas, O
Botchkarev, AE
Salvador, A
Mohammad, SN
Morkoc, H
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7657 - 7666
[10] Mg-doped p-type GaN grown by reactive molecular beam epitaxy
Kim, W
Salvador, A
Botchkarev, AE
Aktas, O
Mohammad, SN
Morcoc, H
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (04) : 559 - 561

← 1 2 3 →