Improvements of the optical and electrical properties of GaN films by using in-doping method during growth
被引:30
作者:
Shen, XQ
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h-index: 0
机构:
RIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, JapanRIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, Japan
Shen, XQ
[1
]
Ramvall, P
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h-index: 0
机构:
RIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, JapanRIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, Japan
Ramvall, P
[1
]
Riblet, P
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h-index: 0
机构:
RIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, JapanRIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, Japan
Riblet, P
[1
]
Aoyagi, Y
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h-index: 0
机构:
RIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, JapanRIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, Japan
Aoyagi, Y
[1
]
机构:
[1] RIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, Japan
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1999年
/
38卷
/
4B期
关键词:
In-doping;
GaN film;
X-ray diffraction;
photoluminescence;
electron mobility;
D O I:
10.1143/JJAP.38.L411
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The optical and electrical properties of GaN films grown by using In-doping method during growth have been investigated. The GaN films were grown on alpha-Al2O3(0001) substrates by gas-source molecular beam epitaxy. X-ray diffraction measurements illustrate that the quality of GaN films were improved by In-doping. Photoluminescence measurements at 10 K show that the band-edge related emission of GaN was enhanced by more than one order of magnitude by this In-doping method, while the luminescence originating from D-A pair recombination and structural defects, or possibly oxygen, was reduced. Furthermore, Hall effect measurements at room temperature (300 K) gave a higher Hall mobility of In-doped samples than non-doped one. The technique of In-doping during GaN growth looks promising for improving the optical and electrical properties of optic and electronic devices.