Improvements of the optical and electrical properties of GaN films by using in-doping method during growth

被引:30
作者
Shen, XQ [1 ]
Ramvall, P [1 ]
Riblet, P [1 ]
Aoyagi, Y [1 ]
机构
[1] RIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 4B期
关键词
In-doping; GaN film; X-ray diffraction; photoluminescence; electron mobility;
D O I
10.1143/JJAP.38.L411
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical and electrical properties of GaN films grown by using In-doping method during growth have been investigated. The GaN films were grown on alpha-Al2O3(0001) substrates by gas-source molecular beam epitaxy. X-ray diffraction measurements illustrate that the quality of GaN films were improved by In-doping. Photoluminescence measurements at 10 K show that the band-edge related emission of GaN was enhanced by more than one order of magnitude by this In-doping method, while the luminescence originating from D-A pair recombination and structural defects, or possibly oxygen, was reduced. Furthermore, Hall effect measurements at room temperature (300 K) gave a higher Hall mobility of In-doped samples than non-doped one. The technique of In-doping during GaN growth looks promising for improving the optical and electrical properties of optic and electronic devices.
引用
收藏
页码:L411 / L413
页数:3
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