Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

被引：15

作者：

Foxon, CT

Hooper, SE

Cheng, TS

Orton, JW

Ren, GB

Ber, BY

Merkulov, AV

Novikov, SV

Tret'yakov, VV

机构：

[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

[2] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England

[3] Chinese Acad Sci, Inst Semicond, Semicond Mat Sci Lab, Beijing 100083, Peoples R China

[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 12期

关键词：

D O I：

10.1088/0268-1242/13/12/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of using an indium flux during the MBE growth of GaN layers was investigated. The properties of these layers were studied using electron probe microanalysis, secondary ion mass spectroscopy, photoluminescence and cathodoluminescence. The optical properties of the GaN layers are shown to improve as compared with undoped GaN layers grown under nominally the same conditions but without an additional indium flux.

引用

页码：1469 / 1471

页数：3

共 10 条

[1] LOW DEFECT DENSITIES IN MOLECULAR-BEAM EPITAXIAL GAAS ACHIEVED BY ISOELECTRONIC IN DOPING [J].