TRAP SUPPRESSION BY ISOELECTRONIC IN OR SB DOPING IN SI-DOPED N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

LI, AZ ^{[1
]}

KIM, HK ^{[1
]}

JEONG, JC ^{[1
]}

WONG, D ^{[1
]}

SCHLESINGER, TE ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3497 / 3504

页数：8

共 46 条

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