LOW DISLOCATION, SEMI-INSULATING IN-DOPED GAAS CRYSTALS

[1] Cottrell A. H., 1953, DISLOCATIONS PLASTIC

[2] DUSEAUX M, 1984, 1984 P SEM 3 5 MAT C

[3] FUKUDA T, 1983, NOV MAT RES SOC M BO

[4] HOBGOOD HM, 1983, JUN EL MAT C BURL

[5] HOBGOOD HM, 1984, 1984 P SEM 3 5 MAT C

[6] JACOB G, 1982, 1982 P SEM 3 5 MAT E, P2

[7] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04): : 593 - 637

[8] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 853 - 855

[9] EFFECTS OF STOICHIOMETRY ON THERMAL-STABILITY OF UNDOPED, SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5771 - 5775

[10] THOMAS RN, SEMICONDUCTORS SEMIM, V20

[1] Cottrell A. H., 1953, DISLOCATIONS PLASTIC

[2] DUSEAUX M, 1984, 1984 P SEM 3 5 MAT C

[3] FUKUDA T, 1983, NOV MAT RES SOC M BO

[4] HOBGOOD HM, 1983, JUN EL MAT C BURL

[5] HOBGOOD HM, 1984, 1984 P SEM 3 5 MAT C

[6] JACOB G, 1982, 1982 P SEM 3 5 MAT E, P2

[7] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04): : 593 - 637

[8] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 853 - 855

[9] EFFECTS OF STOICHIOMETRY ON THERMAL-STABILITY OF UNDOPED, SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5771 - 5775

[10] THOMAS RN, SEMICONDUCTORS SEMIM, V20