LOW DEFECT DENSITIES IN MOLECULAR-BEAM EPITAXIAL GAAS ACHIEVED BY ISOELECTRONIC IN DOPING

被引：59

作者：

BHATTACHARYA, PK

DHAR, S

BERGER, P

JUANG, FY

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 08期

关键词：

D O I：

10.1063/1.97119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：470 / 472

页数：3

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