MINORITY-CARRIER LIFETIME IMPROVEMENT BY SINGLE STRAINED LAYER EPITAXY OF INP

被引：11

作者：

BENEKING, H

EMEIS, N

机构：

来源：

关键词：

D O I：

10.1109/EDL.1986.26307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：98 / 100

页数：3

共 10 条

[1] BAZHENOV VK, 1984, SOV PHYS SEMICOND+, V18, P843
[2] HIGH-QUALITY EPITAXIAL GAAS AND INP WAFERS BY ISOELECTRONIC DOPING
BENEKING, H
NAROZNY, P
EMEIS, N
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 828 - 830
[3] ENHANCED CARRIER LIFETIME AND DIFFUSION LENGTH IN GAAS BY STRAINED-LAYER MOCVD
BENEKING, H
NAROZNY, P
ROENTGEN, P
YOSHIDA, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 101 - 103
[4] LPE GROWTH OF GAXIN1-XAS LAYERS ON INP UNDER PH3 PARTIAL-PRESSURE AND RESULTS ON MG-DOPING
BENEKING, H
GROTE, N
SELDERS, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 59 - 63
[5] BENEKING H, 1985, ESSDERC AACHEN
[6] BENEKING H, 1985, ELECTRONIC MATERIALS
[7] BENEKING H, 1985, 12TH INT S GAAS REL
[8] EMEIS N, 1985, 2 SOTAPOCS TOR
[9] LINDMEYER J, 1965, FUNDAMENTALS SEMICON
[10] EQUILIBRIUM STRUCTURE OF A THIN EPITAXIAL FILM
VANDERMERWE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4725 - +