INVESTIGATION OF HIGH-QUALITY GAAS-IN LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

UDDIN, A ^{[1
]}

ANDERSSON, TG ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.342706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3101 / 3106

页数：6

共 18 条

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