INDIUM-DOPED GAAS - A VERY DILUTE ALLOY SYSTEM

被引：27

作者：

LAURENTI, JP ^{[1
]}

ROENTGEN, P ^{[1
]}

WOLTER, K ^{[1
]}

SEIBERT, K ^{[1
]}

KURZ, H ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.37.4155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4155 / 4163

页数：9

共 29 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] HIGH-QUALITY EPITAXIAL GAAS AND INP WAFERS BY ISOELECTRONIC DOPING [J].

BENEKING, H ;

NAROZNY, P ;

EMEIS, N .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :828-830

[3] LOW DEFECT DENSITIES IN MOLECULAR-BEAM EPITAXIAL GAAS ACHIEVED BY ISOELECTRONIC IN DOPING [J].

BHATTACHARYA, PK ;

DHAR, S ;

BERGER, P ;

JUANG, FY .

APPLIED PHYSICS LETTERS, 1986, 49 (08) :470-472

[4] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS [J].

CHADI, DJ ;

COHEN, ML .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01) :405-419

[5]

Duseaux M., 1984, Semi-Insulating III-V materials, P118

[6]

FAZZIO A, 1979, J PHYS C SOLID STATE, V12, P513, DOI 10.1088/0022-3719/12/3/018

[7]

FAZZIO A, 1979, J PHYS C, V12, P3459

[8] MODEL CALCULATION OF NITROGEN PROPERTIES IN III-V-COMPOUNDS [J].

GIL, B ;

ALBERT, JP ;

CAMASSEL, J ;

MATHIEU, H ;

LAGUILLAUME, CB .

PHYSICAL REVIEW B, 1986, 33 (04) :2701-2712

[9] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

GOETZ, KH ;

BIMBERG, D ;

JURGENSEN, H ;

SELDERS, J ;

SOLOMONOV, AV ;

GLINSKII, GF ;

RAZEGHI, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552

[10]

HARRISON WA, 1979, ELECTRONIC STRUCTURE, P534

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