NONDESTRUCTIVE MEASUREMENT OF INDIUM CONTENT IN SEMIINSULATING GAAS SUBSTRATES AND INGOTS

被引：6

作者：

KIRILLOV, D

VICHR, M

POWELL, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.98219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：262 / 264

页数：3

共 8 条

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JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :179-184

[2]

BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P182

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JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :185-190

[4] LASER-BEAM HEATING AND HIGH-TEMPERATURE BAND-TO-BAND LUMINESCENCE OF GAAS AND INP [J].

KIRILLOV, D ;

MERZ, JL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4104-4109

[5] QUANTITATIVE-ANALYSIS OF IN DENSITY IN SEMI-INSULATING GAAS BY PHOTOLUMINESCENCE [J].

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OZEKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11) :1503-1505

[6] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INXGA1-XAS [J].

NAHORY, RE ;

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DEWINTER, JC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :775-782

[7] SUBSTRATE EFFECTS ON THE THRESHOLD VOLTAGE OF GAAS FIELD-EFFECT TRANSISTORS [J].

WINSTON, HV ;

HUNTER, AT ;

OLSEN, HM ;

BRYAN, RP ;

LEE, RE .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :447-449

[8] IMPROVEMENT OF FIELD-EFFECT TRANSISTOR THRESHOLD VOLTAGE UNIFORMITY BY USING VERY LOW DISLOCATION DENSITY LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS [J].

YAMAZAKI, H ;

HONDA, T ;

ISHIDA, S ;

KAWASAKI, Y .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1109-1111

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