SUBSTRATE EFFECTS ON THE THRESHOLD VOLTAGE OF GAAS FIELD-EFFECT TRANSISTORS

被引：46

作者：

WINSTON, HV

HUNTER, AT

OLSEN, HM

BRYAN, RP

LEE, RE

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：447 / 449

页数：3

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[5] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR
MIYAZAWA, S
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 853 - 855