LOW-DISLOCATION INDIUM-ALLOYED GAAS

被引：27

作者：

KIMURA, H

AFABLE, CB

OLSEN, HM

HUNTER, AT

WINSTON, HV

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90266-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：185 / 190

页数：6

共 18 条

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[5]

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[7] CARBON IN SEMI-INSULATING, LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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[9] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].

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JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424

[10] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

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