An approach to achieve intense photoluminescence of GaN

被引：25

作者：

Shen, XQ ^{[1
]}

Aoyagi, Y ^{[1
]}

机构：

[1] RIKEN, Inst Phys & Chem Res, Semicond Res Ctr, Wako, Saitama 3510198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 1AB期

关键词：

gas-source molecular beam epitaxy (GSMBE); GaN films; In doping; intense photoluminescence;

D O I：

10.1143/JJAP.38.L14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method to achieve intense photoluminescence (PL) of GaN film grown on Al2O3(0001) substrates by gas-source molecular beam epitaxy (GSMBE) is proposed. It was found that the PL intensity of GaN film could be greatly enhanced by In doping during GaN growth. The PL intensity ratio of GaN:In/GaN at room temperature was 35 times stronger in magnitude, while the GaN luminescence wavelength was kept constant.

引用

页码：L14 / L16

页数：3

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