High-power UV InCaN/AlGaN double-heterostructure LEDs

被引：162

作者：

Mukai, T ^{[1
]}

Morita, D ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

LED; InGaN; GaN; UV; MOCVD;

D O I：

10.1016/S0022-0248(98)00292-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ultraviolet (UV) InGaN/AlGaN double-heterostructure (DH) light-emitting diodes (LEDs) with an external quantum efficiency of 7.5%, an output power of 5 mW and an emission wavelength of 371 nm were developed. High-power UV LEDs are obtained using an InGaN active layer with a thickness of 400 Angstrom instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based LEDs. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：778 / 781

页数：4

共 12 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
Akasaki, I
Amano, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A): : 5393 - 5408
[2] Akasaki I, 1992, I PHYS C SER, V129, P851
[3] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
Chichibu, S
Azuhata, T
Sota, T
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (27) : 4188 - 4190
[4] Solid phase immiscibility in GaInN
Ho, IH
Stringfellow, GB
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (18) : 2701 - 2703
[5] GROWTH OF INXGA(1-X)N COMPOUND SEMICONDUCTORS AND HIGH-POWER INGAN/AIGAN DOUBLE-HETEROSTRUCTURE VIOLET-LIGHT-EMITTING DIODES
NAKAMURA, S
[J]. MICROELECTRONICS JOURNAL, 1994, 25 (08) : 651 - 659
[6] P-GAN/N-INGAN/N-GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
NAKAMURA, S
SENOH, M
MUKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (1A-B): : L8 - L11
[7] HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS
NAKAMURA, S
IWASA, N
SENOH, M
MUKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1258 - 1266
[8] HIGH-POWER INGAN/GAN DOUBLE-HETEROSTRUCTURE VIOLET LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
MUKAI, T
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (19) : 2390 - 2392
[9] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
IWASA, N
NAGAHAMA, S
YAMADA, T
MUKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B): : L1332 - L1335
[10] Nakamura S., 1997, BLUE LASER DIODE GAN

← 1 2 →