P-GAN/N-INGAN/N-GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES

被引：429

作者：

NAKAMURA, S

SENOH, M

MUKAI, T

机构：

[1] Department of Research and Development, Nichia Chemical Industries Ltd., Tokushima, 774, 491 Oka, Kaminaka, Anan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 1A-B期

关键词：

P-GAN/N-INGAN/N-GAN; DOUBLE HETEROSTRUCTURE; OUTPUT POWER; EXTERNAL QUANTUM EFFICIENCY; BLUE LEDS; BLUE BAND-EDGE EMISSION;

D O I：

10.1143/JJAP.32.L8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes LEDs were fabricated successfully for the first time. The output power was 125 muW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.

引用

页码：L8 / L11

页数：4

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