Real time control of InxGa1-xN molecular beam epitaxy growth

被引：74

作者：

Grandjean, N ^{[1
]}

Massies, J ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 09期

关键词：

D O I：

10.1063/1.120970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of GaN and InxGa1-xN on c-plane sapphire substrates was carried out by molecular beam epitaxy using NH3. bl situ reflection high-energy electron diffraction (RHEED) was used to monitor the growth process. Oscillations of the specular beam intensity were observed during both GaN and InxGa1-xN deposition. This allows determining in real time the composition of InxGa1-xN alloys. The effects of the growth temperature and the Ga flux on the In incorporation rate were investigated. The critical thickness for InGaN islanding as a function of In mole fraction is also easily deduced from RHEED experiments. (C) 1998 American Institute of Physics.

引用

页码：1078 / 1080

页数：3

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