Strained endotaxial nanostructures with high thermoelectric figure of merit

被引:581
作者
Biswas, Kanishka [1 ]
He, Jiaqing [1 ,2 ]
Zhang, Qichun [1 ]
Wang, Guoyu [3 ]
Uher, Ctirad [3 ]
Dravid, Vinayak P. [2 ]
Kanatzidis, Mercouri G. [1 ,4 ]
机构
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[3] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[4] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
关键词
TEMPERATURE; PBTE; AGPBMSBTE2+M; PERFORMANCE; EFFICIENCY; TELLURIDE; POWER;
D O I
10.1038/NCHEM.955
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Thermoelectric materials can directly generate electrical power from waste heat but the challenge is in designing efficient, stable and inexpensive systems. Nanostructuring in bulk materials dramatically reduces the thermal conductivity but simultaneously increases the charge carrier scattering, which has a detrimental effect on the carrier mobility. We have experimentally achieved concurrent phonon blocking and charge transmitting via the endotaxial placement of nanocrystals in a thermoelectric material host. Endotaxially arranged SrTe nanocrystals at concentrations as low as 2% were incorporated in a PbTe matrix doped with Na2Te. This effectively inhibits the heat flow in the system but does not affect the hole mobility, allowing a large power factor to be achieved. The crystallographic alignment of SrTe and PbTe lattices decouples phonon and electron transport and this allows the system to reach a thermoelectric figure of merit of 1.7 at similar to 800 K.
引用
收藏
页码:160 / 166
页数:7
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