GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

被引：41

作者：

Sun, WH ^{[1
]}

Yang, JW ^{[1
]}

Chen, CQ ^{[1
]}

Zhang, JP ^{[1
]}

Gaevski, ME ^{[1
]}

Kuokstis, E ^{[1
]}

Adivarahan, V ^{[1
]}

Wang, HM ^{[1
]}

Gong, Z ^{[1
]}

Su, M ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期

关键词：

D O I：

10.1063/1.1614835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the growth of GaN/Al0.20Ga0.80N multiple quantum wells (MQWs) on selective-area-grown a-plane GaN pillars over r-plane sapphire. In contrast to the MQWs grown on planar a-plane GaN templates, these GaN/Al0.20Ga0.8N MQWs on the pillars exhibited pit-free and atomically smooth surface morphology. Their structural quality and their UV emission (at 357 nm) increased with the underlying pillar height. The epitaxy of GaN/AlGaN MQWs on the selective-area-grown pillars is thus a promising and simple approach for fabricating stripe-geometry, high-efficiency, nonpolar UV emitters. (C) 2003 American Institute of Physics.

引用

页码：2599 / 2601

页数：3

共 13 条

[1] Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire [J].

Chen, CQ ;

Yang, JW ;

Wang, HM ;

Zhang, JP ;

Adivarahan, V ;

Gaevski, M ;

Kuokstis, E ;

Gong, Z ;

Su, M ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (6B) :L640-L642

[2] GaN homoepitaxy on freestanding (1(1)over-bar00) oriented GaN substrates [J].

Chen, CQ ;

Gaevski, ME ;

Sun, WH ;

Kuokstis, E ;

Zhang, JP ;

Fareed, RSQ ;

Wang, HM ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Maruska, HP ;

Hill, DW ;

Chou, MMC ;

Chai, B .

APPLIED PHYSICS LETTERS, 2002, 81 (17) :3194-3196

[3] Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :469-471

[4] Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure [J].

Deguchi, T ;

Sekiguchi, K ;

Nakamura, A ;

Sota, T ;

Matsuo, R ;

Chichibu, S ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (8B) :L914-L916

[5] Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy -: art. no. 075202 [J].

Ghosh, S ;

Waltereit, P ;

Brandt, O ;

Grahn, HT ;

Ploog, KH .

PHYSICAL REVIEW B, 2002, 65 (07) :1-7

[6] Piezoelectric doping in AlInGaN/GaN heterostructures [J].

Khan, MA ;

Yang, JW ;

Simin, G ;

Gaska, R ;

Shur, MS ;

Bykhovski, AD .

APPLIED PHYSICS LETTERS, 1999, 75 (18) :2806-2808

[7] Substrates for gallium nitride epitaxy [J].

Liu, L ;

Edgar, JH .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2002, 37 (03) :61-127

[8] GaN growth on sapphire [J].

Melton, WA ;

Pankove, JI .

JOURNAL OF CRYSTAL GROWTH, 1997, 178 (1-2) :168-173

[9] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W ;

WOOD, TH ;

BURRUS, CA .

PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060

[10] The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes [J].

Nakamura, S .

SCIENCE, 1998, 281 (5379) :956-961

← 1 2 →