Ion energy distribution in H2/Ar plasma in a planar inductive discharge

被引:38
作者
Gudmundsson, JT [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland
关键词
D O I
10.1088/0963-0252/8/1/007
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The ion energy distribution in H-2 and H-2/Ar plasma in a planar inductive discharge was measured using a quadrupole mass spectrometer. The mean ion energy increases with decreasing pressure from 15 to 40 eV with corresponding ion energy distribution width Delta epsilon(i) increasing from roughly 6 to about 14 eV as the discharge pressure decreased from 24 to 1 mTorr. Furthermore the ion energy distribution becomes narrower and the mean ion energy decreases as the fractional argon content is increased. The sheath is found to be slightly collisional. The dominant ions in H-2 plasma in the pressure range investigated (10-40 mTorr) are found to be H-2(+) and H-3(+) of roughly equal densities.
引用
收藏
页码:58 / 64
页数:7
相关论文
共 24 条
[1]   High dose-rate hydrogen passivation of polycrystalline silicon CMOS TFT's by plasma ion implantation [J].
Bernstein, JD ;
Qin, S ;
Chan, C ;
King, TJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (11) :1876-1882
[2]   MECHANISMS FOR POLYCRYSTALLINE SILICON DEFECT PASSIVATION BY HYDROGENATION IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA [J].
CIELASZYK, ES ;
KIRMSE, KHR ;
STEWART, RA ;
WENDT, AE .
APPLIED PHYSICS LETTERS, 1995, 67 (21) :3099-3101
[3]   SHORT-TIME ELECTRON-CYCLOTRON RESONANCE HYDROGENATION OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR STRUCTURES [J].
DITIZIO, RA ;
LIU, G ;
FONASH, SJ ;
HSEIH, BC ;
GREVE, DW .
APPLIED PHYSICS LETTERS, 1990, 56 (12) :1140-1142
[4]   ION ENERGY-DISTRIBUTIONS IN RADIOFREQUENCY DISCHARGES [J].
FIELD, D ;
KLEMPERER, DF ;
MAY, PW ;
SONG, YP .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :82-92
[5]  
Godyak V. A., 1977, Vestnik Moskovskogo Universiteta, Fizika Astronomiya, V18, P51
[6]   Measurements of electron energy distribution in low-pressure RF discharges [J].
Godyak, V. A. ;
Piejak, R. B. ;
Alexandrovich, B. M. .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1992, 1 (01) :36-58
[7]   DYNAMIC-MODEL OF THE ELECTRODE SHEATHS IN SYMMETRICALLY DRIVEN RF DISCHARGES [J].
GODYAK, VA ;
STERNBERG, N .
PHYSICAL REVIEW A, 1990, 42 (04) :2299-2312
[8]   Experimental studies of H2/Ar plasma in a planar inductive discharge [J].
Gudmundsson, JT .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1998, 7 (03) :330-336
[9]   ION-BOMBARDMENT ENERGY-DISTRIBUTIONS IN A RADIO-FREQUENCY INDUCTION PLASMA [J].
HOPWOOD, J .
APPLIED PHYSICS LETTERS, 1993, 62 (09) :940-942
[10]   Review of inductively coupled plasmas for plasma processing [J].
Hopwood, J. .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1992, 1 (02) :109-116