MOCVD growth of InAsN for infrared applications

被引:68
作者
Naoi, H
Naoi, Y
Sakai, S
机构
关键词
D O I
10.1016/S0038-1101(96)00236-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ternary alloy InAsN has been grown by MOCVD for the first time. The growth was performed at 70 Torr using TMI, AsH3 and NH3 as source gases and GaAs(100) as substrate. The growth temperature and AsH3 to NH3 gas phase ratio, NH3/AsH3, were changed from 550 to 750 degrees C and 100 to 1000, respectively. InAs was also grown at 100 Torr and 500 degrees C. All the samples were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) at room temperature. The increase in growth temperature and gas phase ratio of NH3 made the nitrogen solid composition larger. All the samples have a direct band gap which decreases with increasing nitrogen content. The smallest band gap energy of 0.12 eV at room temperature was obtained for InAs0.939N0.061. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:319 / 321
页数:3
相关论文
共 5 条
  • [1] LUMINESCENCE QUENCHING AND THE FORMATION OF THE GAP1-XNX ALLOY IN GAP WITH INCREASING NITROGEN-CONTENT
    BAILLARGEON, JN
    CHENG, KY
    HOFLER, GE
    PEARAH, PJ
    HSIEH, KC
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (20) : 2540 - 2542
  • [2] MIYOSHI S, 1993, 40 SPR M JAP SOC APP, P347
  • [3] AUGER INVESTIGATION OF GROUP-III NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    NOVIKOV, SV
    FOXON, CT
    CHENG, TS
    TANSLEY, TL
    ORTON, JW
    LACKLISON, DE
    JOHNSTON, D
    BABAALI, N
    HOOPER, SE
    JENKINS, LC
    EAVES, L
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 340 - 343
  • [4] BAND-GAP ENERGY AND BAND LINEUP OF III-V-ALLOY SEMICONDUCTORS INCORPORATING NITROGEN AND BORON
    SAKAI, S
    UETA, Y
    TERAUCHI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10): : 4413 - 4417
  • [5] GROWTH OF GAASN ALLOYS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING PLASMA-CRACKED NH3
    WEYERS, M
    SATO, M
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (12) : 1396 - 1398