Effect of stress on interface transformation in thin semiconducting layers

被引：8

作者：

Bak-Misiuk, J

Domagala, J

Misiuk, A

Sadowski, J

Zytkiewicz, ZR

Trela, J

Antonova, IV

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Inst Electron Technol, PL-02668 Warsaw, Poland

[3] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

THIN SOLID FILMS | 2000年 / 380卷 / 1-2期

关键词：

high pressure-high temperature; X-ray diffraction; thin layer; GaMnAs; AlGaAs; silicon-on-insulator (SOI);

D O I：

10.1016/S0040-6090(00)01528-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of high pressure (1.2. GPa)-high temperature (up to 1400 K) treatment (HP-HT) on the structural properties of GaMnAs/GaAs, AlGaAs/GaAs and Si/SiO2/Si (SOI) structures was studied by high resolution X-ray diffractometry. GaMnAs layers remain strained after the HP-HT treatment, while it results in anisotropic strain relaxation of AlGaAs. The change in lattice parameters of A(III)B(V) layers is explained as an effect of relaxation of the misfit strain via creation of misfit dislocations and of other extended defects, as well as by diffusion of Mn or Al to dislocations. The treatment of SOI structures resulted in increased las compared to the effect of annealing at 10(5) Pa) strain between the Si top layer and the Si bulk. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：117 / 119

页数：3

共 6 条

[1] Influence of high hydrostatic pressure-high temperature treatment on defect structure of AlGaAs layers [J].