ABSOLUTE LATTICE-PARAMETER MEASUREMENTS OF EPITAXIAL LAYERS

被引：13

作者：

FEWSTER, PF ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT MECH ENGN,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

关键词：

D O I：

10.1107/S0021889882011984

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：275 / 278

页数：4

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[4] A DEFECT MODEL FOR UNDOPED AND TELLURIUM DOPED GALLIUM-ARSENIDE [J].

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[5] MEASUREMENT OF STRAIN AND LATTICE-PARAMETER IN EPITAXIC LAYERS [J].

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LLOYD, KH .

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BARTELS, WJ .