Interface reactions between silicon carbide and metals (Ni, Cr, Pd, Zr)

The interface reactions between silicon carbide (SiC) and metals Cr, Zr, Ni and Pd have been studied in the temperature range of 700-1300 degreesC by employing bulk diffusion couples. The reaction products have been identified by SEM/EDX and EPMA. It has been observed that interface reactions between SiC/Cr and SiC/Zr show layered structures and interface reactions between that of SiC/Ni and SiC/Pd show periodic bands in the reaction zone. The observed diffusion paths are related to the respective ternary isothermal phase diagrams. Based on the ternary solid state equilibria and diffusion paths, interpretations pertaining to the nature of reaction products and reaction morphology are: discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.